Self-Sustained Turn-Off Oscillation of SiC MOSFETs: Origin, Instability Analysis, and Prevention

Thermal instability effects in SiC Power MOSFETs

Silicon carbide (SiC) power MOSFETs are characterised by potentially thermally unstable behaviour over a broad range of bias conditions. In the past, such behaviour has been shown for silicon (Si) MOSFETs to be related to a reduction of Safe Operating Area at higher drain–source bias voltages. For SiC MOSFETs no characterisation exists yet. This paper presents a thorough experimental investigat...

Analysis of Voltage Variation in Silicon Carbide MOSFETs during Turn-On and Turn-Off

Due to our limited knowledge about silicon carbide metal–oxide–semiconductor fieldeffect transistors (SiC MOSFETs), the theoretical analysis and change regularity in terms of the effects of temperature on their switching characteristics have not been fully characterized and understood. An analysis of variation in voltage (dVDS/dt) for SiC MOSFET during turn-on and turn-off has been performed th...

Threshold-voltage bias-temperature instability in commercially-available SiC MOSFETs

Positive bias temperature instability of SiC-MOSFETs induced by gate-switching operation

Voltage-sustained self-oscillation of a nano-mechanical electron shuttle

One core challenge of nanoelectromechanical systems (NEMS) is their efficient actuation. A promising concept superseding resonant driving is self-oscillation. Here, we demonstrate voltage-sustained self-oscillation of a nanomechanical charge shuttle. Stable transport at 4.2 K is observed for billions of shuttling cycles, giving rise to ohmic current-voltage curves with a sharp dissipation thres...